Novel Nano material Research group

Publication

Journals

  • Single-crystal growth
  • Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
  • Joo Song Lee, Soo Ho Choi, Seok Joon Yun, Yong In Kim, Stephen Boandoh, Ji-Hoon Park, Bong Gyu Shin, Hayoung Ko, Seung Hee Lee, Young-Min Kim, Young Hee Lee, Ki Kang Kim, and Soo Min Kim. Science 362, 817-821 2018
  • We discover a method of synthesizing wafer-scale single-crystal (SC) hexagonal boron nitride (hBN) monolayer film. In contrary to traditional epitaxial growth, liquid gold substrate allows the self-collimation of circular hBN grains, eventually forming an SC hBN film on a wafer scale. SC hBN serves the growth template for SC-Graphene/hBN heterostructure and SC tungsten disulfide. This is the first…
  • 2D alloy
  • Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1-xSe2 Heterostructure
  • ACS Nano 14, 8784-8792 2020
  • 2D material properties, including electronic and optical properties, can be adjusted through alloying. In this work, we dope NbSe2 with W to make a lateral heterostructure with semiconducting WSe2 on the inside and metallic NbSe2 on the outside. The each point of doping level is characterized by STEM (Scanning Transmission Electron Microscopy) and well correlated with optical (Raman, Photoluminesc…
  • Catalyst
  • Substitutional VSn Nanodispersed in MoS2 Film for Pt-scalable Catalyst
  • Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-Jin Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, and Ki Kang Kim. arXiv:2010.10908 2020
  • This work demonstrate the basal plane activation of 2D MoS2 via substituted V atoms as VSn unit in 2H-MoS2 lattice. The VSn units acts as acive sites and also charge transfer pathways for efficient hydrogen evolution.
  • Device application
  • Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
  • Ki Kang Kim, Hyun Seok Lee, and Young Hee Lee. Chem. Soc. Rev. 47, 6342-6369 2018
  • This work reviews the recent progress of the large-area synthesis of hBN and other related vdW heterostructures via CVD, and artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistantces. The challenges and future perspectives for practical applications…
147. Atomic sawtooth-like metal films for vdW-layered single-crystal growth
Author
Hayoung Ko, Soo Ho Choi, Yunjae Park, Seungjin Lee, Chang Seok Oh, Sung Youb Kim, Young Hee Lee*, Soo Min Kim*, Feng Ding* & Ki Kang Kim*
Journal
Nature Communications
Volume(Issue)
Article
Publication Date
2024.07.11
Project Number
2022R1A2C2091475, 2022M3F3A2A01072215, IBS-R011-D1
Atomic  sawtooth  surfaces  have  emerged  as  a  versatile  platform  for  growth  of single-crystal  van  der  Waals  layered  materials.  However,  the  mechanism  gov-erning the formation of single-crystal atomic sawtooth metal (copper or gold) films  on  hard  substrates  (tungsten  or  molybdenum)  remains  a  puzzle.  In  this study, we aim to elucidate the formation mechanism of atomic sawtooth metal films  during  melting–solidification  process.  Utilizing  molecular  dynamics,  we unveil  that  the  solidification  of  the  liquid  copper  initiates  at  a  high-index tungsten  facet  with  higher  interfacial  energy.  Subsequent  tungsten  facets follow  energetically  favourable  pathways  of  forming  single-crystal  atomic sawtooth  copper  film  during  the  solidification  process  near  melting  tem-perature.  Formation  of atomic  sawtooth  copper  film  is  guaranteed  with  a  film thickness  exceeding  the  grain  size  of  polycrystalline  tungsten  substrate.  We further  demonstrate  the  successful  growth  of  centimeter-scale  single-crystal monolayer hexagonal boron nitride films on atomic sawtooth copper films and explore  their  potential  as  efficient  oxygen  barrier.