Novel Nano material Research group

Publication

Journals

  • Single-crystal growth
  • Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
  • Joo Song Lee, Soo Ho Choi, Seok Joon Yun, Yong In Kim, Stephen Boandoh, Ji-Hoon Park, Bong Gyu Shin, Hayoung Ko, Seung Hee Lee, Young-Min Kim, Young Hee Lee, Ki Kang Kim, and Soo Min Kim. Science 362, 817-821 2018
  • We discover a method of synthesizing wafer-scale single-crystal (SC) hexagonal boron nitride (hBN) monolayer film. In contrary to traditional epitaxial growth, liquid gold substrate allows the self-collimation of circular hBN grains, eventually forming an SC hBN film on a wafer scale. SC hBN serves the growth template for SC-Graphene/hBN heterostructure and SC tungsten disulfide. This is the first…
  • 2D alloy
  • Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1-xSe2 Heterostructure
  • ACS Nano 14, 8784-8792 2020
  • 2D material properties, including electronic and optical properties, can be adjusted through alloying. In this work, we dope NbSe2 with W to make a lateral heterostructure with semiconducting WSe2 on the inside and metallic NbSe2 on the outside. The each point of doping level is characterized by STEM (Scanning Transmission Electron Microscopy) and well correlated with optical (Raman, Photoluminesc…
  • Catalyst
  • Substitutional VSn Nanodispersed in MoS2 Film for Pt-scalable Catalyst
  • Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-Jin Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, and Ki Kang Kim. arXiv:2010.10908 2020
  • This work demonstrate the basal plane activation of 2D MoS2 via substituted V atoms as VSn unit in 2H-MoS2 lattice. The VSn units acts as acive sites and also charge transfer pathways for efficient hydrogen evolution.
  • Device application
  • Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
  • Ki Kang Kim, Hyun Seok Lee, and Young Hee Lee. Chem. Soc. Rev. 47, 6342-6369 2018
  • This work reviews the recent progress of the large-area synthesis of hBN and other related vdW heterostructures via CVD, and artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistantces. The challenges and future perspectives for practical applications…
171. Contemporary Challenges in van der Waals 2D Semiconductors
Author
Balakrishnan Kirubasankar, Ashok Mondal, Seok Joon Yun, Debottam Daw, Yongshan Xu, Lan-Anh T. Nguyen, Yeonjeong Koo, Kamal Kumar Paul, Heemyoung Hong, Hyeongwoo Lee, Yuting Luo, Kailang Liu, Naoki Higashitarumizu, Daniel Erkensten, Chang Yun Heo, Yu-Rim Jeon, Taemin Lee, Dae-Hyun Nam, Xinghui Liu, Soo Min Kim, Dinh Loc Duong, Qinke Wu, Deji Akinwande, Mark C. Hersam, Ali Javey, Ermin Malic, Bilu Liu*, Tianyou Zhai*, Heejun Yang*, Kyoung-Duck Park*, Ki Kang Kim*, Young Hee Lee*
Journal
ACS Nano
Publication Date
2026.01.07.
Project Number
2022R1A2C2091475, RS-2024-00439520
van der Waals (vdW) layered semiconductors have emerged as a unique class of quantum materials distinguished from their bulk counterparts by reduced dielectric screening, strong Coulomb interactions, large exciton binding energies, strong spin−orbit coupling, and pronounced thickness-dependent band structures. These fundamental attributes have enabled the exploration of exotic many-body physics and a broad spectrum of device applications, ranging from field-effect transistors and ferroelectric switches to optoelectronics, magnetic semiconductors,
neuromorphic computing, and energy harvesting systems. Despite remarkable advances, critical challenges remain in the controlled synthesis of high-quality crystals, formation of low-resistance contacts, integration of stable and scalable gate dielectrics, and reliable device performance at the wafer scale. In this mega-review, we provide a comprehensive overview of contemporary challenges and future opportunities in vdW-layered semiconductors, structured across nine themes: growth and heterostructures of transition metal dichalcogenides, Ohmic contacts, emerging gate dielectrics, high-performance low-power field-effect transistors (FETs), diluted magnetic semiconductors, plasmonics and exciton propagation, hot-carrier solar cells, bioinspired neuromorphic computing, and electrocatalytic/photocatalytic energy conversion. By consolidating fundamental insights and device-level perspectives, this review aims to chart a roadmap for advancing vdW semiconductors from laboratory-scale discoveries to transformative technologies in electronics, optoelectronics, spintronics, and sustainable energy systems.