Novel Nano material Research group

Publication

Journals

  • Single-crystal growth
  • Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
  • Joo Song Lee, Soo Ho Choi, Seok Joon Yun, Yong In Kim, Stephen Boandoh, Ji-Hoon Park, Bong Gyu Shin, Hayoung Ko, Seung Hee Lee, Young-Min Kim, Young Hee Lee, Ki Kang Kim, and Soo Min Kim. Science 362, 817-821 2018
  • We discover a method of synthesizing wafer-scale single-crystal (SC) hexagonal boron nitride (hBN) monolayer film. In contrary to traditional epitaxial growth, liquid gold substrate allows the self-collimation of circular hBN grains, eventually forming an SC hBN film on a wafer scale. SC hBN serves the growth template for SC-Graphene/hBN heterostructure and SC tungsten disulfide. This is the first…
  • 2D alloy
  • Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1-xSe2 Heterostructure
  • ACS Nano 14, 8784-8792 2020
  • 2D material properties, including electronic and optical properties, can be adjusted through alloying. In this work, we dope NbSe2 with W to make a lateral heterostructure with semiconducting WSe2 on the inside and metallic NbSe2 on the outside. The each point of doping level is characterized by STEM (Scanning Transmission Electron Microscopy) and well correlated with optical (Raman, Photoluminesc…
  • Catalyst
  • Substitutional VSn Nanodispersed in MoS2 Film for Pt-scalable Catalyst
  • Frederick Osei-Tutu Agyapong-Fordjour, Seok Joon Yun, Hyung-Jin Kim, Wooseon Choi, Soo Ho Choi, Laud Anim Adofo, Stephen Boandoh, Yong In Kim, Soo Min Kim, Young-Min Kim, Young Hee Lee, Young-Kyu Han, and Ki Kang Kim. arXiv:2010.10908 2020
  • This work demonstrate the basal plane activation of 2D MoS2 via substituted V atoms as VSn unit in 2H-MoS2 lattice. The VSn units acts as acive sites and also charge transfer pathways for efficient hydrogen evolution.
  • Device application
  • Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics
  • Ki Kang Kim, Hyun Seok Lee, and Young Hee Lee. Chem. Soc. Rev. 47, 6342-6369 2018
  • This work reviews the recent progress of the large-area synthesis of hBN and other related vdW heterostructures via CVD, and artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistantces. The challenges and future perspectives for practical applications…
49. Role of anions in the AuCl3-doping of carbon nanotubes
Author
Soo Min Kim, Ki Kang Kim, Young Woo Jo, Min Ho Park, Seung Jin Chae, Dinh Loc Duong, Cheol Woong Yang, Jing Kong, Young Hee Lee
Journal
ACS Nano
Volume(Issue)
5(2)
Page
1236-1242
Publication Date
2011.02.22.
Abstract

The doping/dedoping mechanism of carbon nanotubes (CNTs) with AuCl3 has been investigated with regard to the roles of cations and anions. Contrary to the general belief that CNTs are p-doped through the reduction of cationic Au3+ to Au0, we observed that chlorine anions play a more important role than Au cations in doping. To estimate the effects of Cl and Au on CNTs, the CNT film was dedoped as a function of the annealing temperature (100−700 °C) under an Ar ambient and was confirmed by the sheet resistance change and the presence of a G-band in the Raman spectra. The X-ray photoelectron spectroscopy (XPS) analysis revealed that the doping level of the CNT film was strongly related to the amount of adsorbed chlorine atoms. Annealing at temperatures up to 200 °C did not change the amount of adsorbed Cl atoms on the CNTs, and the CNT film was stable under ambient conditions. Alternatively, Cl atoms started to dissociate from CNTs at 300 °C, and the stability of the film was degraded. Furthermore, the change in the amount of Cl atoms in CNTs was inversely proportional to the change in the sheet resistance. Our observations of the Cl adsorption, either directly or mediated by an Au precursor on the CNT surface, are congruent with the previous theoretical prediction.