[미국] Formation method of hexagonal boron nitride thick film on a substrate and hexagonal boron nitride thick film laminates thereby (기판과 그것에 의한 6 각형 질화 붕소 후막 라미네이트 위의 6 각형 질화 붕소 후막의 형성 방법)
Soo-Min Kim/ Ki-Kang Kim/ Joo-Song Lee
The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film.